Abstract
The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
