Abstract
We measured the linewidth enhancement factor (α factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures.One is a normal QD LD with the same energy bandgap for each active QD layer, while theother is chirped with different energy bandgaps. The differential gain of the chirped InAsQD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereasno overall wavelength shift with injection currents is observed in both QD LDs. Theα factor is approximately five times higher in the chirped InAsQD LDs than in the normal InAs QD LDs. This relatively largeα factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneousgain profile.
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