Abstract
Tapered oscillators fabricated from GaInAsSb-AlGaAsSb quantum-well structure are reported for the first time. The quantum-well laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 330 A/cm/sup 2/ at room temperature. One tapered laser emitting at 2.02 mu m has exhibited continuous wave (CW) output power up to 750 mW, with power in the near-diffraction-limited central lobe as high as 200 mW.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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