GaInAsP Lateral Current Injection Lasers for Opteelectronic Integrated Circuits

Abstract

There have been many attempts to obtain transmitter optoelectronic integrated circuits (OEICs) which contain laser diodes as a transmitter light source. In these OEICs, using semi-insulating substrates reduces paracitic capacitances which results in high-speed modulation. Vertical current injection lasers are fabricated on semi-insulating substrates by inserting an n+-layer for the n-electrode interconnection, but this leads to a rough and uneven surface that causes frequent electric disconnection and largely degrades the OEIC's yield.