Abstract
An Si/Al/sub 2/O/sub 3/ mirror has been introduced into the p-side mirror of a 1.3 /spl mu/m GaInAsP/InP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current I/sub th/=12 mA) has been obtained for an 8/spl times/8 /spl mu/m device at room temperature. Its threshold current density was /spl sim/18 kA/cm/sup 2/. Near room temperature (13/spl deg/C) CW oscillation for another chip has also been realised. >
Published Version
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