Abstract
Heteroepitaxy of GaInAsP grown on Si by metalorganic vapor phase epitaxy has been studied. High-quality GaInAsP (λ g=1.55 μm)layers were obtained on InP layers grown on Si by introducing GaAs/InP double buffer layers. The lattice matching conditions for the quaternary layers on InP/Si were examined for several compositions by comparing with those for the quaternary layers grown on InP substrates. It was found that there were different matching conditions in the growth of the layers on Si and of the layers on InP substrates due to the lattice distortion of the InP layers on Si.
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