Abstract
The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3 mu m and 1.55 mu m are described. The lasers are of the etched mesa buried heterostructure type, and utilise semi-insulating InP layers both the lateral optical confinement and current confinement. The 1.55 mu m emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range, and have quantum efficiencies comparable to single emitter lasers.
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