Abstract
In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3μm light emission by using GaInAs/GaAsSb-based type-II quantum wells. The LED was grown by LP-MOVPE and achieves emission from 2μm to 3μm at room-temperature. Furthermore a second LED with centered emission at 2.8μm has been realized. Hence, the achievable long-wavelength electroluminescence emission with InP-based materials has been extended up to 3μm.
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