GaInAs/GaAs Micro-Arc Ring Semiconductor Laser

Abstract

We have proposed a micro-arc-ring-cavity (MARC) laser, which consists of an etched concave reflector and two plane reflectors. The resonant optical wave can be tightly confined by total internal reflection in the lateral microcavity. We present the theoretical basis of a MARC laser, focusing on the design issue for low threshold operation, transverse mode control and light output coupling. We also present some experimental lasing characteristics of 0.98 µ m GaInAs/GaAs strained quantum well MARC lasers fabricated by direct electron beam lithography and reactive ion beam etching.