GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

Abstract

Aluminum-free GaInAs/GaInP strained quantum well (QW) laser diodes grown on GaAs were prepared by molecular beam epitaxy (MBE) employing solid phosphorus and arsenic valved cracking cells for the first time. The separate confinement heterojunction laser structure utilized Ga0.51In0.49P cladding layers, a GaAs waveguide region, and a single 100 Å Ga0.18In0.82As QW. Stimulated emission from this structure was observed at λ∼0.98 μm (1.265 eV). The threshold current density of broad area devices with 100×500 μm2 dimensions were measured as low as 290 A/cm2 and had power slope efficiencies between 0.35 and 0.40 W/A. The estimated transparency current density for the structure is 50 A/cm2. The data show all solid source MBE is a growth technology capable of producing laser diode structures of comparable quality to that of the other growth processes requiring hydrides.