Abstract
We report on the spatial uniformity of the gain <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</tex> of InP/ InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's). Typically, these APD's exhibit less than 10 percent variation in the gain (for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M \leq 10</tex> ) over the entire photosensitive area. The small nonuniformity which is observed shows a one-to-one correspondence with inhomogeneities in the epitaxial layers of the SAGM-APD structure. We also observe a reduction in the effective photosensitive diameter with increasing bias voltage.
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