Abstract
Long wavelength 1.3 μm gain coupled distributed feedback (GC-DFB) lasers were realized by masked implantation enhanced intermixing. On the basis of this full planar technology GC-DFB lasers with first and second order gratings were fabricated in the InGaAs/InGaAlAs system. The lasers show clear GC-DFB laser emission with a single mode yield of 69% and remain single mode up to several times laser threshold. The results are in good agreement with the theoretical description of our gain coupled lasers by optical matrix theory.
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