Abstract
A dual-stage L-band gain-clamped erbium-doped fiber amplifier (GC-EDFA) by using backward C-band amplified spontaneous emission (ASE) is proposed. Compared with other similar GC-EDFAs, the proposed structure has higher and flatter clamped gain in L-band because of its optimal pump power and EDF length. The flatness from 1570nm to 1600nm arrives 0.77dB, the bandwidth of 3dB is more than 35nm and the maximal input signal power arrives −15dBm.
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