Gain and luminescence spectra of broadband emitters based on asymmetric quantum-well heterostructures

Abstract

Laser diodes and amplifiers of a new type based on asymmetric quantum-well heterostructures having a set of effective layers of different thickness are considered. In distinction to conventional laser heterostructures, for such modified quantum-well systems the gain spectrum and the set of lasing frequencies can be varied over a wide range by choosing the widths and the component composition of quantum wells and barrier regions. The transformation of the amplification bands for the TE and TM modes with the excitation current was studied. Calculations were performed for the GaAs−AlxGa1−xAs system. In a model of direct transitions the subbands of heavy and light holes as well as changes in the polarization factor with the frequency of light are considered. A number of questions associated with spectral broadening of lines and determination of radiation localization and distribution of quasi-Fermi levels in the effective layers are discussed.