Abstract
The use of Ga-doped Czochralski (CZ) silicon wafers in Passivated Emitter and Rear Cells (PERC) has been confirmed to have a prominent advantage in suppressing light-induced degradation (LID), which will attract considerable attention for the application of Ga-doped wafers in more efficient photovoltaic devices. In this work, we investigate the passivation quality and address the issue of LID in Ga-doped CZ Si wafers equipped with p-type polysilicon passivating contact that consists of an ultrathin SiO x and a heavily doped polysilicon. We also present the modeling results for solar cells using this type of contact. The experiments show that samples with Ga-doped CZ Si wafers have superior anti-LID properties when compared to the samples with B-doped wafers. An excellent passivation performance with a high implied open-circuit voltage ( iV oc ) of 705 mV and a low single-sided saturation current density ( J 0,s ) of 9 fA/cm 2 was achieved. Moreover, with the help of the numerical simulations, we predict that the p-type Ga-doped CZ Si solar cells with p-type polysilicon passivating contacts have the potential to achieve a high efficiency of 23.8%, an ~0.5% absolute efficiency improvement over that of PERC solar cells. The results demonstrated in this study suggest that Ga-doped CZ Si wafers combined with p-type polysilicon passivating contacts could resolve the LID issue while maintaining good passivation properties, providing a promising alternative for p-type solar cells in the photovoltaic industry. • The p-type TOPC on featuring Ga-doped CZ Si wafers achieved an excellent passivation quality with iV oc > 705 mV. • The passivation improvement sources of Ga-doped CZ Si-based structures were attributed to the suppression of B- and O-related defects. • Ga-doped TOPCon solar cells show the LID-free performance. • Simulation results show a comparable efficiency of 23.8% for Ga-doped TOPCon solar cells.
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