Abstract
Preparation and properties of InAs/GaAs quantum dots (QDs) prepared by MOVPE technology covered by GaAsSb strain reducing layer (SRL) with long emission wavelength suitable for telecommunication applications will be presented. Shift of the emission wavelength was achieved by introduction of GaAsSb SRL. SRL with high Sb concentration preserves QD size (which is about 15 nm wide at the base and 5 nm high), decreases the strain inside InAs QDs and decreases the barrier height in valence band. All these phenomena increase the photoluminescence (PL) wavelength. Different antimony content profile can significantly change the PL properties of such QD structures. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a redshift of the PL wavelength with decreased PL intensity is typical. On this kind of structure, extremely long (record) emission wavelength at 1.8 μm was achieved. However low PL intensity may complicate light emitting applications.
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