Abstract
Stripe-geometry lasers with high-density GaAs/(GaAs) 4 (AlAs) 2 quantum wires (QWRs) as an active region were grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy. The (7 7 5)B QWRs were naturally formed at thick parts in a GaAs/(GaAs) 4 (AlAs) 2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower interface. The (7 7 5)B QWR lasers with a high one-dimensionality exhibited threshold current densities of 1.9 kA/cm 2 at 20°C for a cavity length of 1 mm, which were about 35% lower than those of conventional QW lasers simultaneously grown on (1 0 0) GaAs substrates. Moreover, they showed a 30% higher characteristic temperature in the range of 20–80°C than the (1 0 0) QW lasers.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
