Abstract
Bi incorporations can reduce the bandgap of GaAs1-xBix. With a Bi content of 10.5%, GaAsBi is predicted to emit light at 1.55 μm. However, high Bi incorporation is difficult for material growth and deteriorates the optical property of GaAsBi. In this work, a GaAsBi quantum dot (QD)/InAlAs structure on InP platform is proposed to fabricate 1.55 μm laser diodes. Strain distributions and band structures are calculated with different Bi contents and QD sizes using finite element method. High Bi contents and large QD sizes are beneficial for achieving long wavelengths. GaAsBi QD/InAlAs structures with a low Bi content of 5.6% and proper QD sizes, such as a diameter of 30 nm and a height of 6 nm, can emit light at 1.55 μm. The proposed structure can be realized by migration enhanced epitaxy and droplet epitaxy and provides a feasible way for fabricating GaAsBi based 1.55 μm laser diodes applied in fiber-optic communications. The emission wavelength of GaAsBi QDs with different sizes and Bi contents
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