Abstract
A GaAs/Al(0.30)Ga(0.70)As multiple-quantum-well vertical optical modulator has been grown on a GaAs substrate using the metal-organic vapor-phase epitaxy technique. This device was removed from the original substrate and placed on a glass carrier by means of epitaxial lift-off (ELO). Photocurrent measurements before and after the ELO show clear exciton absorption peaks and indicate the development of a Fabry-Perot cavity after ELO due to multiple reflections between the front and back of the ELO film. Transmission measurements show a maximal contrast ratio of 2.9 dB and an insertion loss of 2.8 dB at a wavelength of 831 nm.
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