Abstract
A critical step toward the realization of optical interconnect between or on electronic chips at the high-density level is the monolithic combination of electronic and optical devices. Toward this end, we have pursued the monolithic integration of GaAs multiple quantum well (MQW) modulators with GaAs-based doped-channel heterostructure field-effect transistors (HFETs). Since the MQW pin device functions as both a modulator and a detector, its presence permits optical input and output. We refer to this integrated device structure as a field-effect transistor self-electro-optic effect device (FET-SEED). Such an approach permits the realization of complex circuits (the level of complexity being yield limited) with optical input and output anywhere on the circuit.[1, 2, 3] We have previously described the structure and fabrication of these devices.[1, 3]
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