Abstract
The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 µm diameter and 8 µm tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation, the device exhibited a threshold current of 3.5 mA, a differential quantum efficiency of 33% and a light output power of 4.2 mW. CW operation at temperatures up to 97°C is also demonstrated.
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