Abstract
The interaction between drifting carriers near the surface of GaAs and a slow TM wave is studied under the two sets of boundary conditions. A transverse static magnetic field is included, and a continuous wave amplifier operating up to l0 GHz is found to be feasible with present technology. The near equality of operating and dielectric relaxation frequencies is emphasized. The recently reported experimental result wherein net terminal gain was achieved for the first time (Baudrand et al. 1984) is studied in light of the calculations. The construction of a device operating at 5 GHz is examined, and overheating is not a problem. A gain of 20 dB is possible with output levels in the tenths of watts range.
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