Abstract
Transmission GaAs/GaAlAs/GaP photocathodes have been grown by a combination of LPE and VPE (hybrid) epitaxy. The quality of the VPE GaAs material is comparable to that grown by LPE, and the surface uniformity and quality is comparable to that generally obtained by VPE. The GaAs/GaAlAs heterojunction is characterized by low interface recombination velocity.
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