Abstract
X-ray photoemission spectra taken at glancing angles from GaAs(110) cleaved surfaces indicate structure at 1.1, 1.9, 3.7, 6.5, 11.0, and 12.0 eV which can be directly related to peaks in the surface density of states. Nearly identical structure was observed for (100) surfaces. Strong fluctuations in the emission intensities of the Ga and As(3d) core levels were observed with the emission angle. Their origins and implications are discussed.
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