Abstract
The first known p-channel GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As HFETs on InP are reported. The devices, using a strained-layer GaAs/sub x/Sb/sub 1-x/ channel, have achieved extrinsic transconductances of 40 mS/mm and intrinsic transconductances of 100 mS/mm. In addition to high transconductance, the devices exhibit excellent pinchoff and demonstrate a record gate turn-on voltage of -3 V as a result of extremely low gate leakage currents, making them exceptional candidates for complementary technologies. These outstanding gate characteristics are attributed to the valence band-edge discontinuity of 0.64 eV.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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