Abstract
The spontaneous-emission spectra of liquid-phase-epitaxial grown double-heterostructure light-emitting diodes with a Si-doped GaAs active region and Ga1−xAlxAs barrier regions have been measured as a function of the Si concentration in the growth solution and the thickness of the active region. The results indicate that a graded band-gap region is probably formed at the GaAs–Ga1−xAlxAs interface. The double-heterostructure light-emitting diodes are compared with homojunction diodes as potential excitation sources for upconverting phosphors.
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