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Abstract
Edge-emitting diodes with a GaAs saw-tooth superlattice as the active region operating with high efficiency at 300 K are reported. The saw-tooth superlattice active region of the device consists of alternating n- and p-type Dirac-delta-doped GaAs layers grown by molecular beam epitaxy. The superlattice bandgap energy is lower than that of the GaAs host material. The new superlattice diode emits monochromatic light at wavelengths λ ⩾ 0.9 μm.
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