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Abstract
Multiple vertically stacked GaAs/Al/sub x/Ga/sub 1-x/As quantum wires laser diodes have been fabricated via MOVPE on v-grooved GaAs substrates. The devices are electrically isolated by oxygen ion implantation, utilizing the nonplanarity of the device. The process is self-aligning and requires no masking, yielding significant simplification in the device fabrication. Optimum implant conditions are determined. A quantum internal efficiency of 65.8% is measured for the optimum implanted devices, which exhibit a 5.5 mA threshold current.
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