Abstract
Using Monte Carlo simulation, the self-catalyzed GaAs planar nanowire growth with a gallium droplet as a catalyst was considered. Planar nanowires were formed by molecular beam epitaxy via the vapor-liquid-solid mechanism. The vicinal GaAs(111)A substrates with a film-mask coverage were used. The planar nanowire formation kinetics was analyzed. For the planar nanowire growth, the arsenic adhesion coefficient and the gallium surface diffusion should be increased on vicinal surfaces, in comparison with singular substrates. The nanowire growth directions are determined by the GaAs crystallography and are limited by vicinal surface steps.
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