Abstract
AbstractAn ion microprobe mass analysis (IMMA) study of the oxides formed on GaAs at ambient temperature and in ambient atmosphere is compared with a similar study carried out using XPS. The distribution of the various oxides identified from their unequivocal fragment ions is analysed. The multilayer model proposed on the basis of XPS results is largely confirmed with the exception of gallium hydroxide which, from the IMMA results, appears to be distributed across the whole oxide thickness.
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