Abstract
Surface-reflection second-harmonic generation (SHG) was applied to observe the surface-oxide removal of GaAs(001) using a pulsed hydrogen plasma. Real-time observations were carried out to monitor a specific polarization component of SHG. The p-polarized SH intensity under p-polarized excitation increased in the [01̄1] azimuth of incidence and decreased in the [011] azimuth of incidence during hydrogen plasma irradiation while the other component, the p-polarized SH intensity under s-polarized excitation did not change. The input polarization-angle dependence was examined before and after the oxide removal. The variation in the SH intensity during the hydrogen plasma treatment was found to be mainly due to variation in the surface-susceptibility tensor elements. Among these, an “isotropic” tensor element, ∂zzz (or ∂ξξz=∂ηηz), changes most significantly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
