Abstract
Thin Al 2O 3 films were grown at room temperature on GaAs and silicon by a photochemical reaction between aluminium and oxygen molecular beams excited by UV light. Except for a small dispersion of the dielectric constant, the high quality of the films is conformed from the electronic properties of p-Si metal-oxide-semiconductor (MOS) structures. The capacitance-voltage and conductance-voltage characteristics of the GaAs MOS structures are found to be remarkably improved by annealing in a hydrogen atmosphere before and after Al 2O 3 growth for n-type and p-type specimens, respectively. This behaviour is explained by a new model of surface states associated with dangling bonds of arsenic atoms in the oxide.
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