Abstract
The breakover voltage of double-injection devices is calculated and is shown to be a constant at low thermal hole densities but a monotonically decreasing function of thermal holes at high densities. The results are applied to GaAs:Mn double-injection devices to explain their relatively low experimental breakover voltage. The radiant flux from the GaAs:Mn devices is measured and shown to exhibit a decreasing quantum efficiency with increasing current due to a carrier sweep out effect.
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