Abstract
We demonstrate for the first time a GaAs on insulator (GOI) technology, with aluminum oxide (Al/sub 2/O/sub 3/) formed by the wet oxidation of AlAs as the insulating buffer layer. The insulating buffer gives excellent charge control and eliminates substrate leakage current. The first results of GOI technology include 1.5-/spl mu/m gate length GOI MESFET's with f/sub /spl tau//=9 GHz and f/sub max/=45 GHz.
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