Abstract
This paper gives an overview of the basic concepts used in the design and fabrication of gallium arsenide MESFET integrated circuits intended for gigabit logic applications. The present status of speed-power performances, packing densities, and integration levels is presented on the basis of some MSI and LSI MESFET IC realizations made possible by the principal GaAs logic approaches to date. Finally, the potential field of application and future trends of GaAs IC technology are assessed.
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