Abstract
In this paper, we describe the design, manufacturing and characterization of a monolithically integrated micromachined millimeter-wave receiver module. The antenna array, the matching network, and the GaAs Schottky diode are supported on a thin GaAs membrane. The receiver structure benefits from the advantages of the membrane supported transmission lines as well as of the Schottky diode integration on the membrane. The 2.2 μm thin GaAs membranes were grown by molecular beam epitaxy and formed by reactive ion etching employing selective etch-stop techniques. The results from the measurements of the voltage sensitivity and the radiation pattern of the 38 GHz receiver demonstrated state-of-the-art performance of the micromachined structure fabricated with our process.
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