Abstract
In this article, improved nonlinear modeling technique for microwave PHEMT is described. The accurate small-and large-signal models of HEMT, MESFET devices are used for robust designs and fabrication development. The implementation of model is done by parameter extraction as well as using Agilent’s ADS. The modeling procedure is used to extract the model of PHEMT EC2612 supplied by United Monolithic Semiconductor Inc. This model is used to design single-stage 10/20 GHz wideband frequency doubler with a maximum conversion gain of 3 dB. The doubler has 40% bandwidth over the input frequency range of 8–12 GHz. A band reject at fundamental frequency filter has been designed at output stage of doubler instead of conventional λ/2 open circuit reflector at second harmonic frequency, which is responsible for broadband operation of doubler.
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