GaAs-GaAlAs heterostructure single-mode channel-waveguide cutoff modulator and modulator array

Abstract

A GaAs single-mode channel-waveguide cutoff modulator that utilizes a GaAs-GaAlAs heterostructure and a linear array of such modulators are reported for the first time. We have measured a cutoff voltage as low as 9.0 V and an extinction ratio greater than 20 dB at an optical wavelength of 1.3 μm in a basic modulator that utilized a GaAs-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.93</inf> Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.07</inf> As heterostructure with a 0.9 μm thick GaAs epitaxial layer together with a ridge channel 2.5 mm in length and 5.0 μm in width. We have also succeeded in the realization of a high packing density (500 channels/cm) linear array of such cutoff modulators in the same GaAs substrate with equally satisfactory results. An RF bandwidth of 2.5 GHz has also been measured with the elementary modulator of such array. As in the case for LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> substrates, the GaAs-based integrated optic modules that result from integration of such cutoff modulator arrays, microlens arrays, and planar acoustooptic or electrooptic Bragg diffraction grating arrays in a common substrate may be used to perform multiport switching, computing, and RF signal processing.