Abstract
Classical Bragg reflection computation is extended from the transparent wavelength region of GaAs to the 0.6–0.9 μm wavelength range. Our model includes (i) absorption effects, (ii) refractive index changes around the bandgap of both materials, and (iii) air Ga 1- x Al x As interface reflection. Reflection measures are made and compared with the results of the model. Actual thickness and Al atomic fractions of layers are being determined by double X-ray diffraction (DXD) technique. Good agreement between theory and experiment is observed.
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