Abstract
GaAs based heterojunction bipolar transistors have a relatively large turn-on voltage of approximately 1.4 V that can only be decreased by reducing the bandgap energy of the base material. For a variety of applications, particularly operation with low power supply voltage and reduced power dissipation, it would be desirable to have a smaller value of turn-on voltage. We report the DC performance of NpN double heterojunction bipolar transistors fabricated on a GaAs substrate with a Ga 0.89In 0.11N 0.02As 0.98-base that has a bandgap energy ( E g) of ∼0.98 eV. These devices have a turn-on voltage V BE that is 0.4 V lower than that of their GaAs-base counterparts. To overcome the large conduction band discontinuity between GaAs and Ga 0.89In 0.11N 0.02As 0.98 both chirped superlattice and delta doping were employed. Peak incremental current gain of h fe=8.5 was obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
