GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules

Abstract

Thin GaAs films were heteroepitaxially grown on Si substrates by mixture beams of 60 eV ions and neutral molecules without prebaking at a high temperature or intermediate layers. Surfaces of the Si substrates were amorphized by collision of the low-energy ions. The amorphous Si surface layers were automatically inserted between Si substrates and GaAs films and they served as a buffer layer to relieve strain due to large lattice mismatch and difference in coefficients of linear expansion between GaAs films and Si substrates.