Abstract
In this work, the effect of the dose of implantation of Ga atoms into the silicon surface on the epitaxial growth of GaAs was investigated. We demonstrate that the deposition of GaAs occurs mainly on modified areas. Separate crystallites of GaAs with an irregular shape are formed on modified areas at the lowest dose of Ga implantation equal to 1 pC/μm2, whereas an increase in the dose of Ga implantation leads to the coalescence of GaAs areas. At a maximum dose of 21 pC/μm2, degradation of the morphology and a decrease in the degree of filling of the area are observed, which is also confirmed by an increase in the roughness of the structure.
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