Abstract
We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.
Highlights
We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates
In this work we demonstrate a novel approach for the growth, directly on exact-(001) Si substrates, of high optical quality, large area epitaxial GaAs layers free of threading dislocations (TDs), cracks and AP boundaries
The scanning electron microscope (SEM) measurements show the absence of cracks in the Ge and GaAs layer, confirming that the thermal stress induced by the annealing and GaAs growth on the structure is released through the deformation of the Si pillars[31]
Summary
We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a threetemperature procedure for the growth This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. An effective strategy to overcome both these limits is the use of 3D growth of thick III–V micro-crystals on deeply patterned Si substrates. This growth method gives rise to GaAs epitaxial crystals, several micrometers wide, with no cracks and no threading dislocations[20,21]. Different AP domains are characterized by crystal orientations rotated of 90° along
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
