Abstract
We demonstrate a GaAs-based superluminescent diode (SLD) based on the incorporation of a window-like back facet into a self-aligned stripe structure in order to reduce the effective facet reflectivity. This allows the realisation of SLDs with low spectral modulation depth (SMD) at high power spectral density (PSD), without the application of anti-reflection coatings to either facet. This approach is therefore compatible with ultra-broadband gain active elements. We show that 30 mW output power can be attained in a narrow bandwidth, corresponding to 2.2 mW nm−1 PSD with only 5% SMD, centred about 990 nm. We discuss the design criteria for high power and low SMD and the deviation from a linear dependence of SMD on output power, resulting from Joule heating in the self-aligned stripe.
Highlights
Superluminescent diodes (SLDs) offer relatively high power over a broad and smooth emission spectrum
A key parameter defining the coherence properties of the superluminescent diode (SLD) is the spectral modulation depth (SMD), which occurs due to Fabry–Perot modes arising from nonzero reflection at the facets of the device
We demonstrate low SMD from SLDs with no facet coating, making them naturally broadband
Summary
Superluminescent diodes (SLDs) offer relatively high power over a broad and smooth emission spectrum. In this paper we present a new scheme for low Reff facets, based on the application of a self-aligned stripe regrowth process [13], to realise window-like structures in GaAs-based SLDs. We demonstrate low SMD from SLDs with no facet coating, making them naturally broadband.
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