Year-end Sale % OFF 
Abstract
Conduction electrons in GaAs are described theoretically using a five-level k.p model and including effects of the electron-optic phonon interaction. The dispersion relation E(k) in the band and in the forbidden gap, the energy dependence of the effective mass and the spin g-value, as well as the resulting peculiarities of the cyclotron resonance are calculated and compared with experimental data of various authors. It is shown that the electrons in GaAs exhibit typical narrow-gap properties.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
