Abstract
A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0.999/transfer and-have operated at clock frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f_{cl} = 500</tex> MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.
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