GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture

Abstract

The feasibility of a novel approach for single electron quantum LSIs (Q-LSIs) is investigated. It is based on the binary decision diagram (BDD) logic architecture, using arrays of GaAs and InGaAs single electron BDD node devices formed on hexagonal nanowire networks. Single electron branch switches using nanometer-scale Schottky wrap gates on AlGaAs/GaAs etched nanowires and on InGaAs nanowires by selective MBE growth were fabricated. They showed clear conductance oscillation characteristics controlled by a single electron lateral resonant tunneling. Successful design and fabrication of GaAs-based single electron BDD node devices and circuits including OR logic elements and a 2 bit adder indicates the basic feasibility of realizing single electron Q-LSIs by the novel approach.