Abstract
The paper presents the results of the development of AlGaAs/GaAs and GaSb cells, manufactured for tandem solar cells and designed for point and line-focus concentrator modules. The maximum efficiency of 23-23.6% (25/spl deg/C, AM0) under 20-70 suns was achieved in the AlGaAs/GaAs infrared transparent cells with prismatic cover. The efficiency of 27.5% under AM1.5, 140 suns has been achieved. The cells based on GaSb homo-junctions, Zn-diffused structures have been developed for tandems and thermophotovoltaic (TPV) applications. AM1.5 efficiencies as high as 6.7% behind the GaAs filter for concentration ratio of 240 suns were achieved. Lattice matched p-n InGaSbAs-InGaSb heterostructures have been fabricated Zn-diffusion method. The long wavelength edge of photosensitivity of these cells is 2.15-2.2 /spl mu/m.
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