Abstract
We present experimental results on quantum-well photodetectors for visible and infrared dual-band detection. Large band gap top contacts were used on a standard GaAs/AlGaAs quantum-well infrared photodetector so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two designs were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice contact layer. The dual-band response spectral regions are 0.55–0.7 and 7–10 μm. Measured responsivities are about 0.7 A/W at 8.3 μm and 0.1 A/W at 0.63 μm under −6 V bias voltage.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
