GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

Abstract

Using buried wet-oxidised Al/sub x/O/sub j/ layers to enhance impurity free vacancy diffusion, the intermixing of GaAs/AlGaAs quantum wells has been achieved. A 70 /spl Aring/ thick GaAs quantum well shows a blueshift of 59 meV when the sample is annealed at 950/spl deg/C for 120s. By cathodoluminescence measurements, it is confirmed that the bandgap transition region is localised laterally within 1 /spl mu/m of the oxide/nonoxide interface.